Description:
The 2N7000 is a silicon-based Field Effect Transistor (FET) manufactured using high-cell-density DMOS technology. This design minimizes on-state resistance while providing highly reliable performance. It is commonly used as a "voltage-controlled switch," meaning it can be turned on or off with very little current at the gate, making it directly compatible with the TTL and CMOS logic levels found on Arduino, Raspberry Pi, and other microcontrollers.
Features:
Fast Switching: Features typical rise and fall times of 10–13 ns, making it ideal for high-speed pulse-width modulation (PWM) and digital signal processing.
Logic-Level Drive: Can be easily triggered by low-voltage signals (as low as 0.8V to 3V), eliminating the need for complex driver circuits.
Rugged Construction: Designed to be reliable under varying thermal conditions, with a wide operating temperature range from -55°C to +150°C.
High Sensitivity: Its low input capacitance (20–50 pF) ensures rapid response times and reduces the load on preceding circuit stages.
Compact Through-Hole Design: The TO-92 package is easy to handle for breadboarding, prototyping, and manual soldering.
Specifications:
Transistor Polarity: N-Channel Enhancement Mode
Drain-Source Voltage (VDS): 60 V
Continuous Drain Current (ID): 200 mA to 350 mA
Pulsed Drain Current (IDM): Up to 500 mA
Static Drain-Source On-Resistance (RDS(on)): 5.0Ω (Max) at 10V VGS
Gate Threshold Voltage (VGS(th)): 0.8V−3.0V
Power Dissipation (PD): 400 mW
Package Style: TO-92 (Through-Hole)
Switching Speed (ton/toff): ∼10 ns
